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Information × Registration Number 0220U104895, 0119U001986 , R & D reports Title Development of manufacturing technology for epitaxial structures of halium arsenide and Gunn diodes based on them for microwave electronic systems. popup.stage_title Head Krukovskyi Semen I., Доктор технічних наук Registration Date 30-12-2020 Organization Scientific Research Company "Electron-Carat"-Branch of Private Joint Stock Company "Concern-Electron" popup.description2 SRW report: 169 p., 1 ch., 14 tabl., 72 fig., 15 app., 75 sources. HANN DIODE, GALIUM ARSENID, LIQUID PHASE EPITAXY, MICROWAVE RADIATION, ELECTRON CONCENTRATION, CONTACT LAYER, EPITAXIAL STRUCTURE The object of research is n+-GaAs / i-GaAs / n+-GaAs epitaxial structures for Gunn diodes. The purpose of the work is to test the technological modes of crystallization of the n+-GaAs contact layer, the active i-GaAs layer, which are part of the n+-GaAs / i-GaAs / n+-GaAs epitaxial structure for Gunn diodes and the sharp boundaries of the electron concentration. Production of experimental samples and carrying out of preliminary and acceptance tests. Research methods - liquid-phase epitaxy, which was used for crystallization of active i-GaAs and contact n+ -GaAs layers as part of epitaxial structures of n+-GaAs / i-GaAs / n+ -GaAs for Gunn diodes. Methods of C-V electro-chemical profiling and Hall effect for the study of electrical parameters of epitaxial layers and + -GaAs and n + -GaAs layers. Optical microscopy. Technological modes of crystallization of the contact n+-GaAs and active i-GaAs layer, which are a part of the epitaxial n + -GaAs / i-GaAs / n + -GaAs for Gunn diodes and sharp boundaries of the electron concentration between different layers, have been worked out using the method of liquid-phase epitaxy. A method for controlling the thickness of layers and electrophysical parameters of layers of epitaxial structure n + -GaAs / i-GaAs / n + -GaAs for Gunn diodes using electro-chemical profiling has been developed. The Technological instruction for obtaining n + -GaAs / i-GaAs / n + -GaAs epitaxial structures for Gunn diodes was developed, experimental samples of epitaxial structures were grown and preliminary and acceptance tests of experimental structures were carried out, which confirmed compliance of parameters of manufactured structures with the requirements of the Technical Task. The final Scientific Report has been prepare.   Product Description popup.authors Izhnin Ihor I. Baljuk Liliya M. Krukovskyi Semen I. Prytulyak Bohdan B. Rejkin Borys O. popup.nrat_date 2020-12-30 Close