Registration Number
0221U100316,
0118U000138
, R & D reports
Title
Heterojunctions and Shottky diodes with high radiation resistance .
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Head
Maistruk Eduard V, Доктор фізико-математичних наук
Registration Date
04-01-2021
Organization
Yuriy Fedkovych Chernivtsi National University
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The purpose of the work – obtaining heterojunctions and Schottky diodes by deposition of thin films of graphite, metal oxides and nitrides on semiconductor crystals and thin films with increased radiation resistance; the establishment of regularities in the course of physical processes in the created detector and photosensitive structures, as well as the development of new and improvement of existing methods for the analysis of the electrical and photoelectric properties of heterojunctions and Schottky diodes.
Optimal technological modes have been established in the work. A comprehensive study of the structural, electrical, optical, photoelectric and magnetic properties of base materials has been carried out. The conditions for the manufacture of new and previously unexplored Schottky diodes and heterojunctions have been studied. Physical models and mechanisms for quantitative description of the obtained results have been developed. Possible ways to improve the quality of basic materials of radiation-resistant electronics have been identified.
Product Description
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Ilashchuk Maria I
Andrushchak Halyna O
Koziarskyi Ivan P
Koziarskyi Dmytro P
Maistruk Eduard V
Mostovyi Andrii I
Orletskyi Ivan H
Parkhomenko Hryhorii P
Solovan Mykhailo M
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2021-01-04
