Registration Number
0221U100430,
0119U002247
, R & D reports
Title
Formation of graded-gap film structures based on CdSexTe1-x for solar cells and optimization of their properties
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Head
Registration Date
05-01-2021
Organization
Lviv Polytechnic National University
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The optimal profiles of the coordinate distribution of the composition of the CdSeхTe1-х graded gap structures, which provide the required gradient of the band gap and the maximum efficiency of sunlight photoconversion are calculated.
The design of a sublimation system in a closed space for carrying out technological processes of АIIВVI materials deposition, which can be used to obtain photoelectric structures with graded gap active layers based on solid solutions of these materials, is proposed and implemented.
The physico-chemical bases of the technology have been established and the optimal technological regimes for obtaining CdSeхTe1-х graded gap semiconductor films are worked out.
An experimental and theoretical study of structural, optical, band-energy characteristics has been carried out. The values of effective masses, optical parameters, acoustic velocity, Debye temperature and elastic properties (bulk modulus, shear modulus, Young's modulus and Poisson's ratio) of CdSeTe solid solutions have been established
Product Description
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Vysochans`ka (Zmiiovska) Emilia O
Honchar Fedir M
Danylov Andrii B
Kashuba Andrii I
Krukovskiy Semen I
Lopatynskyi Ivan Ye
Petrus Roman Yu
Semkiv Ihor V
Solovyov Mykola V
Ukrainets Natalia A
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2021-01-05
