Registration Number
0221U101133,
0120U105440
, R & D reports
Title
Development of physical principles of acoustically controlled modification and machine-oriented characterization of silicon solar cells.
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Head
Olikh Oleg Ya., Кандидат фізико-математичних наук
Registration Date
15-01-2021
Organization
Taras Shevchenko National University of Kyiv
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Object of research: charge transfer processes in silicon solar cells with different states of defects associated with iron atoms Purpose: to obtain an array of volt-ampere characteristics of n + -p-p + structures with different parameters, which will be used to adjust and training of the neural network focused on the assessment of the concentration of electrically active centers; testing the method of measuring the kinetics of light-induced processes in silicon solar cells. Research methods: modeling of volt-ampere characteristics, measurement of volt-ampere characteristics and spectra of internal quantum yield. According to the developed calculation model of silicon n + -p-p + structure, modeling of more than 40 thousand volt-ampere characteristics of systems with different base thickness (150240 μm) and the degree of its doping (1015 ÷ 1017 cm-3) with variation in the concentration of impurity iron in the range of 1010 ÷ 1013 cm-3 for the temperature range 290340 K; this takes into account the possibility of impurity iron atoms in the internodal state and in the FeB pair. A method for measuring the kinetics of light-induced processes in silicon solar cells is proposed, which is based on sequential illumination of samples and measuring the change in the amplitude of the photo response to a monochromatic signal with a wavelength of 900-980 nm at low excitation. It is shown that the peculiarities of the short-circuit current kinetics (law of change, dependence of absolute changes on the duration of intense illumination and characteristic time on temperature) coincide with the known regularities of reconstruction of defective complexes containing interstitial iron and boron replacement atom.
Product Description
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Vlasiuk Viktor M.
Korkishko Roman М.
Kostylyov Vitaly P.
Kostina Artem R.
Lozytsʹkyy Oleh V.
Mayko Kateryna О.
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2021-01-15
