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Information × Registration Number 0221U101726, 0116U004171 , R & D reports Title The effects of anisotropy of the physical properties of crystal lattices and engineering on the basis of parameters of semiconductor materials and nanosystems popup.stage_title Head Kladko Vasyl P., Registration Date 25-01-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  Methods for effective measurement of deformation state, concentration distributions and type of defects in AlxGa1-xN NG and films based on laboratory X-ray diffraction are presented. A detailed analysis is performed and the mechanism of reducing the density of helical and edge dislocations in GaN films is established, which is explained by the annihilation reactions of dislocations with increasing thickness of the AlN buffer layer. Based on the theory of X-ray diffraction, an effective method for calculating the thickness deformation profiles and component composition in gradient coherent AlxGa1-xN films is presented. Product Description popup.authors popup.nrat_date 2021-01-25 Close