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Information × Registration Number 0221U102121, 0116U003742 , R & D reports Title Photoelectrical and structural characteristics of the nano-size semiconductor materials popup.stage_title Head Lytovchenko Volodymyr H., Доктор фізико-математичних наук Registration Date 28-01-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The object of research is the semiconductor nanoscale structures, semiconductor quantum dots, metal nanoparticles, structured surface layers and device structures based on them. The research methods are the infrared absorption, photoluminescence, photovoltaics and electrical methods. Computer modeling of physical properties of nanostructures, comparison of theoretical and experimental results. Results: - developed original technologies for the formation of nanoscale silicon and metal clusters and thin layers of semiconductors, placed both on the free surface and embedded in dielectric matrices of various types; - photoelectric, luminescent, and surface properties of nanosized semiconductor structures have been studied in detail, important peculiarities of physical processes occurring in nanostructures have been established; - proposed theoretical models for calculating the parameters of semiconductor nanocrystals and the efficiency of photoelectric transformation; - silicon structures for use as photovoltaic converters of solar energy were studied and criteria for obtaining extremely high parameters of devices were formulated and gas sensitivity of MIS structures was increased using metal nanocomposite catalysts, which allowed to form prototypes of sensors with high gas sensitivity. Predictive assumptions for the development of research objects - optimization of technologies for the formation of nanocluster systems with specified parameters and small size variation for use in devices of nanoelectronics, optoelectronics, nanophotonics, photoelectrics and sensors. NANOCRYSTALS, SILICON, A2B6, LAYERED STRUCTURES, NANOSTRUCTURES, LUMINESCENCE, PHOTOELECTRIC CONVERTERS, GAS SENSORS. Product Description popup.authors Evtukh Anatoliy A. Danko Viktor A. Klyui Mykola І. Korbutiak Dmytro V. Kostylyov Vitaly P. popup.nrat_date 2021-01-28 Close
R & D report
Head: Lytovchenko Volodymyr H.. Photoelectrical and structural characteristics of the nano-size semiconductor materials. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U102121
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Updated: 2026-03-21