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Information × Registration Number 0221U102162, 0116U001936 , R & D reports Title The investigation of influence of various physical-active influences on the properties of materials popup.stage_title Head Lunov Serhii V, Registration Date 28-01-2021 Organization Lutsk National Technical University popup.description2  The aim of the work is the study of the influence of the high-energy physical fields on the electric and tensoelectric properties of n-Ge, n-Si and CdSb single crystals, internal mechanical strains on the band structure and electrical properties of germanium nanofilms. As a result of the research, the energy spectrum and kinetics of annealing of radiation defects in electron-irradiated n-Ge single crystals were obtained. The main parameters and the nature of radiation defects created under the action of electron irradiation in germanium and silicon were established. The influence of the created radiation defects on the scattering mechanisms, tensoresistance, magnetic sensitivity for these single crystals is investigated. A method for determining the ionization energy of deep levels in CdSb single crystals is proposed. Dependences of electrical conductivity, mobility and concentration of current carriers on the value of internal mechanical strains for undoped and doped germanium nanofilms are obtained. Product Description popup.authors Zakharchuk Dmytro A Koval Yuriy V Nazarchuk Petro F Panasyuk Leonid I Pasternak Roman M Yashchynskyy Leonid V popup.nrat_date 2021-01-28 Close