Registration Number
0221U102162,
0116U001936
, R & D reports
Title
The investigation of influence of various physical-active influences on the properties of materials
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Head
Lunov Serhii V,
Registration Date
28-01-2021
Organization
Lutsk National Technical University
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The aim of the work is the study of the influence of the high-energy physical fields on the electric and tensoelectric properties of n-Ge, n-Si and CdSb single crystals, internal mechanical strains on the band structure and electrical properties of germanium nanofilms. As a result of the research, the energy spectrum and kinetics of annealing of radiation defects in electron-irradiated n-Ge single crystals were obtained. The main parameters and the nature of radiation defects created under the action of electron irradiation in germanium and silicon were established. The influence of the created radiation defects on the scattering mechanisms, tensoresistance, magnetic sensitivity for these single crystals is investigated. A method for determining the ionization energy of deep levels in CdSb single crystals is proposed. Dependences of electrical conductivity, mobility and concentration of current carriers on the value of internal mechanical strains for undoped and doped germanium nanofilms are obtained.
Product Description
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Zakharchuk Dmytro A
Koval Yuriy V
Nazarchuk Petro F
Panasyuk Leonid I
Pasternak Roman M
Yashchynskyy Leonid V
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2021-01-28
