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Information × Registration Number 0221U102166, 0116U002886 , R & D reports Title Kinetic and optical properties of nanostructured systems irradiated by high-energy electrons. popup.stage_title Head Yaskovets Ivan I., Доктор фізико-математичних наук Registration Date 28-01-2021 Organization Institute of Physics of National Academy of Sciences of Ukraine popup.description2 The object of research is the processes of defect formation in nano- and microelectronic materials, which occur under the influence of high-energy irradiation and subsequent temperature annealing. The purpose of the work is to study the radiation effects in modern materials of nano- and microelectronics - carbon nanotubes, reduced graphene oxide, monocrystalline silicon, silicon oxide nc-Si/SiO2 films, in order to expand the application of materials and to improve the parameters of devices based on them. Research methods - experimental and theoretical investigations of the processes of formation, migration and transformation of defects that occur due to irradiation with 1 - 5 MeV electrons, their influence the electrical and optical properties and magnetic conductivity of the materials. The studies were performed using infrared Fourier, Raman and Auger spectroscopy, measurements of volt-ampere characteristics, irradiation systems. Investigations of the temperature dependence of the electrical resistance of carbon nanotubes bundles irradiated by 1 MeV electrons have revealed the availability of an annealing of radiation-induced defects at temperatures below room temperature. It is shown that in the temperature range 7 - 300 K annealing of radiation-induced defects occurs according to the first-order reaction. At low temperatures (7–40 K) annealing occurs without activation, and at temperatures 100–300 K the annealing process occurs with activation energy of ~ 0.05 eV. It is established that in the reduced graphene oxide samples irradiated at 300 K there is a nonmonotonic dependence of the resistivity on the irradiation dose. The effect is explained by quantitative changes in sp3 bonds, which create new pathways for electric current. In boron-doped silicon, which is commonly used in the production of modern submicron devices and solar energy converters, a number of new radiation defects that include boron atoms were identified. Product Description popup.authors Voitovych Vasyl V Voitsihovska Olena O Duvanskyi Andrii V Malenko Olena S Pipko Alla V Rudenko Roman M Samochornykh Sergii V Sosnin Mykhailo G Trypachko Mykola O Khirunenko Ludmyla I Yaskovets Ivan I popup.nrat_date 2021-01-28 Close