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Information × Registration Number 0221U102438, 0119U102502 , R & D reports Title Crystallization of GaN on the seed by a temperature gradient method popup.stage_title Head Rumiantseva Yuliia Yu., Registration Date 02-02-2021 Organization V. Bakul Institute of superhard material of the National Academy of Sciences of Ukraine popup.description2 A literature review of the existing methods of GaN production was performed and the analysis of the results obtained in the first stage was performed. The results of obtaining GaN crystals in the Fe-Ga-N system at a 3 - 8 GPa pressure range are considered and the influence of single crystal growth parameters is analyzed. on the structural perfection of GaN crystals. The compositions of solvent material alloys and technological parameters for experiments with determination of the solubility of GaN in these alloys under conditions of high pressure and temperature and delineation of areas where it is possible to grow GaN single crystals. Product Description popup.authors Savytskyi Oleksandr V Sadova Yuliia I popup.nrat_date 2021-02-02 Close