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Registration Number

0221U102508, 0118U002049 , R & D reports

Title

Physical bases for creation of metal and semiconductor device structures for nuclear, termo-nuclear and extra-atmosphere solar energetics

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Head

Malykhin Sergii V, Доктор фізико-математичних наук

Registration Date

04-02-2021

Organization

National Technical University "Kharkiv Polytechnic Institute"

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 Object of research: Regularities of change of structural characteristics and physical properties of functional materials under the influence of high-energy particles, streams of electromagnetic radiation, powerful plasma, thermal fields, contact loads. The aim is to determine new effects and regularities of changes in the structure and physical properties of structural and functional solid materials, layered device structures, which are promising when used under conditions of radiation, thermal and mechanical loads of extreme intensity. Research methods: X-ray, electron-optical, optical and photoelectric analysis of structure and physical properties of structural and functional solid materials and layered instrument structures. The main scientific and technical results: Physical and technical bases of laboratory technology for obtaining the production of radiation-resistant quasi-crystalline film coatings based on the Ti-Zr-Ni system have been developed. The regularities of the formation of the icosahedral structure in the thin films of the quasicrystalline phase, as well as the related phases of the approximate crystals, have been established. For the first time data on the formation of an approximate crystal 2/1 in this system were obtained. The mechanisms of crack formation in tungsten divertor plates (of ITER type) irradiated with hydrogen plasma at steady state (Falcon ion source) and during the transition period (ELMs type I on QSPA Kh-50), which consists in plastic deformation of surface layers by the twinning mechanism, are established. The latter is enhanced by the interaction of twins with hydrogen-filled micropores formed due to coalescence of vacancy complexes. Physical models of radiation influence on the initial parameters of instrument structures based on CdTe and ZnO, consisting in the interaction and evolution of point defects stimulated by the corresponding radiation exposure, have been developed. The concept of creating radiation-resistant photov

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Zhadan Dmitro O
Zaitsev Roman V
Kirichenko Mikhailo V
Klєpikova Kateryna S
Klochko Natalya P
Kovtun Nazar A
Kopach Volodymyr R
Lyubov Viktor M
Malykhin Sergey V
Makhlai Vadim O
Merіuts Andriy V
Lyubov Viktor M
Rudchenko Svitlana O
Sokol Evgen I
Starikov Vadim V
Surovitskiy Serhiy V
Kharchenko Mikola M
Shipkova Iryna G

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2021-02-04