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Registration Number

0221U103117, 0116U008468 , R & D reports

Title

Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures

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Head

Gaidar Galyna Petrivna, Доктор фізико-математичних наук

Registration Date

14-02-2021

Organization

Institute of Nuclear Research of the National Academy of Sciences of Ukraine

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It has been found that irradiation with 1 MeV fast neutrons of aluminum-gallium arsenide LED structures results in a radiation-stimulated increase in the forward current due to a decrease in the concentration of majority charge carriers and the lifetime of minority carriers. It has been established that in zinc diphosphide, phosphorus chains are the most sensitive to the action of radiation since its destructive influence mainly concerns the frequencies inherent in the vibrations of phosphorus quasi-molecules. It was revealed that irradiation of cadmium diphosphide with 14 MeV electrons, as in the case of zinc diphosphide, leads to the initial deformation of the optical absorption edge due to the action of the tails of the density of states at low fluences, and to its complete disappearance at large ones. It was shown that the recovery as a result of isochronous annealing is a stageless one, which is typical for crystals with a high concentration of defects of various types. It was found that as a result of irradiation of gallium phosphide crystals with high-energy electrons, protons, and alpha-particles, conical protrusions appear on the surface, specific for each type of radiation, and their shape and size depend on the mass and energy of the particles. It was shown that the maximal density of such nanoformations is observed in samples containing a high concentration of point defects (electron irradiation). Microplasma breakdowns of red and green phosphide-gallium diodes were investigated. It was revealed that at the beginning of the breakdown, the main contribution to the reverse current comes from the tunnelling component; the avalanche component plays a major role at high breakdown currents. It was stated that irradiation with 2 MeV electrons leads to a decrease in the number of microplasmas due to blocking of breakdown channels by radiation defects and increasing the number of nonradiative levels. 

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Varnina Valentyna I
Vorobyiov Volodymyr H
Konoreva Oksana V
Makykha Oleksandr M
Malyi Evgen V
Pinkovska Myroslava B
Petrenko Igor V
Starchyk Margaryta I
Tartachnyk Volodymyr P

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2021-02-14