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Information × Registration Number 0221U103118, 0116U002919 , R & D reports Title A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences. popup.stage_title Head Gaidar Galyna Petrivna, Доктор фізико-математичних наук Registration Date 14-02-2021 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description2 It was found that the use of high-energy light ions causes the formation of ordered layers of various natures and widths associated with defects in the bulk of silicon at depths of up to several hundred microns, which makes it possible to change the properties of silicon. The nature of defect formation (the number and width of the revealed stress lines) under conditions of silicon irradiation with large ion fluences depends on the ion mass and energy, the irradiation temperature, and the properties of the crystal itself. The possibilities of creating a superlattice of vacancy pores in irradiated silicon with the aim of obtaining a new material with increased radiation hardness were clarified. To simplify the rather complicated procedure for the experimental measurement of tenso-thermo-emf of n-silicon crystals in the region of electron-phonon drag, a method is proposed and experimentally substantiated for determining this value on the basis of much simpler measurements of tensoresistance using the formula obtained in the theory of anisotropic scattering for the case of purely phonon scattering. It was established that irradiation with 2 MeV electrons of GaP LED structures leads to an increase in forward currents in the region of small fluences (up to 10^15 cm^-2) and small direct displacements (no more than 2-3 V). It was shown that the radiation "improvement" of the volt-ampere characteristic is due to a decrease in the contact potential as a result of partial equalization of the Fermi levels in the base regions of the LED. The characteristics of the initial and irradiated with 2 MeV electrons three-component GaAs1-xPx LED structures (orange and yellow), obtained on the basis of solid solutions of gallium arsenide and gallium phosphide, are studied. It was revealed that the areas of negative differential resistance on the volt-ampere characteristic are the result of the presence of the gallium phosphide sublattice in the solid solution. Product Description popup.authors Yermolchyk Volodymyr O Varnina Valentyna I Vorobyiov Volodymyr H Konoreva Oksana V Litovchenko Petro H Makykha Oleksandr M Malyi Evgen V Pinkovska Myroslava B Petrenko Igor V Starchyk Margaryta I Tartachnyk Volodymyr P popup.nrat_date 2021-02-14 Close