Registration Number
0221U103358,
0118U006408
, R & D reports
Title
New semiconductor 1D- and 2D-structures based on CNTs and transition metal oxides for use in effective thermophotoconverters of energy and sensors
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Head
Len Yevhen H, Доктор фізико-математичних наук
Registration Date
18-02-2021
Organization
Institute of Metal Physics. G.V. Kurdyumov of the National Academy of Sciences of Ukraine
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Semiconductor 2D-structures on substrates of high-resistance Si were synthesized by Reactive Pulse Laser Deposition (RPLD) method in reactions of Cr atoms in CH4 atmosphere. Obtained systems are one of the most promising materials for the manufacture of highly sensitive thermal and photosensors operating at moderate temperatures. At the same time, they were obtained within the framework of ‘green’ technology.
The principles of construction and optimization of properties of metal-carbon electrodes of direct low-temperature thermionic converters of solar energy into electric one, based on nonlocal in time and space processes of gradual excitation of electrons in nanostructured solid and their emission in vacuum, were developed.
Product Description
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Galstian Iryna Ye.
Gerasymov Oleksandr Yu.
Mykhailova Halina Yu.
Mulenko Sergiy A.
Patoka Viktor I.
Rud Mykhaylo O.
Sydorchenko Igor M.
Smolnik Svyatoslav V.
Tsapko Yevgen A.
Shatniy Tetyana D.
Shevchenko Mykola Ya.
Yakymchuk Mykola M.
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2021-02-18
