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Information × Registration Number 0221U104074, 0121U108634 , R & D reports Title Semiconductor low-dimensional and nanoscale structures for THz detection popup.stage_title Head Syzov Fedir F., д.ф.-м.н. Registration Date 02-03-2021 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The study of the characteristics of linear bolometric receivers of different configurations based on CdxHg1-xTe epitaxial layers with antennas showed their sensitivity to both unpolarized and polarized THz radiation in the spectrum range (28 GHz - 1 THz). The study of the polarization dependences of the photoresponsiveness of CdxHg1-xTe epitaxial structures revealed the effect of reducing the crystal lattice symmetry due to the presence of mechanical stress and an external electric field. In order to create detectors for millimeter vision systems on low-dimensional InAs Schottky diodes with an inverse conduction channel, preliminary studies of the electrical parameters of mesostructural p-n junctions based on InAs were performed. The mesostructures were prepared by etching in Br2-HBr solution and treated in different etching compositions in order to study the effect of chemical treatments on the formation of a two-dimensional inverse conduction channel. It is established that the surface shunt current of transitions contains ohmic and neomic components, and the neomic component is caused by the mechanism of the current limited by a space charge. This conductivity mechanism has previously been experimentally established in InAs-based quantum cords. The search for analogues and prototypes for the development of sensor design for silicon-based biorecognition systems with nanoscale elements has been carried out. Product Description popup.authors popup.nrat_date 2021-03-02 Close