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Information × Registration Number 0221U104793, 0119U100308 , R & D reports Title Principles of control of optical and photoelectric properties of hybrid metal-semiconductor films and nanodiode-like structures. popup.stage_title Head Kondratenko Sergii V., Доктор фізико-математичних наук Registration Date 13-04-2021 Organization Taras Shevchenko National University of Kyiv popup.description2 The object of research is the interaction of electromagnetic radiation of the optical range with hybrid metal-semiconductor nanostructured films containing nanosized particles Ge, SiGe, GeSn, (In, Ga) As, Au, Ag, Cu; photoelectric converters based on heterostructures InGaAs / GaAs, SiGe / Si, GeSn / Ge / Si, PEDOT: PSS / Si. The purpose of the study is to develop the scientific basis for obtaining hybrid nanostructured films with semiconductor and metal components with a predetermined set of optical and photoelectric properties, as well as to determine the suitability and feasibility of using these objects in optoelectronics and photovoltaics. Research methods - spectral and polygonal ellipsometry, photoluminescence spectroscopy, photocurrent, photoelectric imaging, nonstationary deep level spectroscopy, thermally stimulated conductivity, atomic force microscopy, electron microscopy, X-ray diffractometry, light diffraction measurement, and Raman scattering quantum mechanical modeling of the band structure and optical constants of thin films. The technology of creation and analysis of the main optical and photoelectric properties of optoelectronic devices based on barrier structures containing metal-semiconductor nanostructured films, multilayer semiconductor heterojunctions, inorganic-organic heterojunctions with semiconductors and semiconductors have been developed and analyzed. Approaches to the controlled change of their structural and morphological, optical, electrophysical and photoelectric properties have been developed, the results of measuring the main characteristics of the developed optoelectronic devices have been obtained. It is shown that InGaAs / GaAs and GeSn / Ge / Si heterostructures can be used as effective photosensitive materials of the middle and near infrared range due to the controlled change of the working spectral range by choosing the design of structures and morphology of nanosized films.  Product Description popup.authors Datsenko Oleksandr І. Derenko Sergiy S. Gigan Volodymyr М. Zelensʹkyy Serhiy Е. Kovanzhi Petro O. Kolesnyk Oleksandr S. Makarenko Oleksiy V. Nedbayeva Ludmyla V. Poperenko Leonid V. Prorok Vasyl V. Rozuvan Stanislav G. Stashchuk Vasylʹ S. Sharapa Andriy I. Yurgelevych Iryna V. Yablochkov Sergiy M. Yablochkova Kateryna S. Yampolsky Andriy L. popup.nrat_date 2021-04-13 Close