2 documents found
Information × Registration Number 0221U106611, (0120U102172) , R & D reports Title New opportunities of cross-correlation scanning probe and optical diagnostics for local electrophysical, optical and magnetic properties of nanomaterials and device structures in nanophotonics, piezotronics and spintronics. popup.stage_title Взаємодоповнююча характеризація напівпровідникових нитковидних та приладних гетероструктур з використанням модифікованих методів Кельвін-зонд і провідної мікроскопії та мікрораманівської і фотолюмінесцентної спектроскопії Head Lytvin Petro M., Кандидат фізико-математичних наук Registration Date 15-12-2021 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 Development of new non-destructive nano-diagnostics methods, including high-resolution lateral mapping of structural and electrophysical parameters of semiconductor nano-materials and low-dimensional systems by current-sensitive, electrostatic force and magnetic force scanning probe microscopy and confocal optical spectroscopy. popup.description2 Inhomogeneities of the spatial distribution of strain fields in GaN/AlxGa1-xN/GaN 1D nanoheterostructures were detected. The significant relaxation of strains inside, both in the radial and axial direction from the interface of GaN/AlxGa1-xN inserts illustrated. It is shown that the overgrowth of the side faces of nanowires causes heterogeneity of deformations and leads to the appearance of additional axial mechanical stresses and piezo polarization effects as well as the effects of electron accumulation at the boundaries of the axial layers. The influence of phase-structural inhomogeneities on the localization of the surface potential and charge carriers distribution is shown in GeSn/Ge/ Si structures. The effects of inversion of the conductivity type of GeSn wires under the action of the electric field of the microscope probe are revealed.  Product Description popup.authors Kolomys Oleksandr F. Korchovyi Andrii A. Lytvyn Petro M. Nikolenko Andrii S. Prokopenko Ihor V. Strelchuk Viktor V. popup.nrat_date 2021-12-15 Close
R & D report
Head: Lytvin Petro M.. New opportunities of cross-correlation scanning probe and optical diagnostics for local electrophysical, optical and magnetic properties of nanomaterials and device structures in nanophotonics, piezotronics and spintronics.. (popup.stage: Взаємодоповнююча характеризація напівпровідникових нитковидних та приладних гетероструктур з використанням модифікованих методів Кельвін-зонд і провідної мікроскопії та мікрораманівської і фотолюмінесцентної спектроскопії). V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0221U106611
Information × Registration Number 0221U106611, (0120U102172) , R & D reports Title New opportunities of cross-correlation scanning probe and optical diagnostics for local electrophysical, optical and magnetic properties of nanomaterials and device structures in nanophotonics, piezotronics and spintronics. popup.stage_title Взаємодоповнююча характеризація напівпровідникових нитковидних та приладних гетероструктур з використанням модифікованих методів Кельвін-зонд і провідної мікроскопії та мікрораманівської і фотолюмінесцентної спектроскопії Head Lytvin Petro M., Кандидат фізико-математичних наук Registration Date 15-12-2021 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 Development of new non-destructive nano-diagnostics methods, including high-resolution lateral mapping of structural and electrophysical parameters of semiconductor nano-materials and low-dimensional systems by current-sensitive, electrostatic force and magnetic force scanning probe microscopy and confocal optical spectroscopy. popup.description2 Inhomogeneities of the spatial distribution of strain fields in GaN/AlxGa1-xN/GaN 1D nanoheterostructures were detected. The significant relaxation of strains inside, both in the radial and axial direction from the interface of GaN/AlxGa1-xN inserts illustrated. It is shown that the overgrowth of the side faces of nanowires causes heterogeneity of deformations and leads to the appearance of additional axial mechanical stresses and piezo polarization effects as well as the effects of electron accumulation at the boundaries of the axial layers. The influence of phase-structural inhomogeneities on the localization of the surface potential and charge carriers distribution is shown in GeSn/Ge/ Si structures. The effects of inversion of the conductivity type of GeSn wires under the action of the electric field of the microscope probe are revealed.  Product Description popup.authors Kolomys Oleksandr F. Korchovyi Andrii A. Lytvyn Petro M. Nikolenko Andrii S. Prokopenko Ihor V. Strelchuk Viktor V. popup.nrat_date 2021-12-15 Close
R & D report
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Head: Lytvin Petro M.. New opportunities of cross-correlation scanning probe and optical diagnostics for local electrophysical, optical and magnetic properties of nanomaterials and device structures in nanophotonics, piezotronics and spintronics.. (popup.stage: ). VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. № 0221U106611
2 documents found

Updated: 2026-03-27