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Information × Registration Number 0221U106777, 0121U112812 , R & D reports Title Straintronics of imperfect quasi-two-dimensional materials: coplanar vs lamellar heterostructures popup.stage_title Head Radchenko Taras M., Доктор фізико-математичних наук Registration Date 20-12-2021 Organization Institute of Metal Physics. G.V. Kurdyumov of the National Academy of Sciences of Ukraine popup.description2 A modern concept of "deformation engineering" ("straintronics") using a set of created and implemented computer programs for calculations of electronic structure and transport characteristics of graphene- and phosphorene-like layers and structures with linear defects affected by external magnetic field and mechanical stresses is developed. Distributions of point defects can cause a number of effects: change the type of main current carriers, induce a band gap in the energy spectrum, significantly modify the type of electron-concentration dependence of conductivity, improve the functionality of 2D material, changing electrical conductivity in dozens times, increase or decrease (even totally suppress) the asymmetry between the electron and hole conductivities. We optimized the computer program for calculating the density of electronic states and calculating densities of states of the strained phosphorene; and was found that shear and tensile strains, as well as their combinations are a powerful tool to achieve a new level of quasi-2D materials from the point of view of their practical application as elements of nanoelectronics. This concerns the improvement of their electrotransport properties by tuning the band gap values sufficient to transform graphene (phosphorene) material from a semi-metallic (semiconductor) state with an absent (existing) gap in the energy spectrum to a semiconductor (semi-metallic) state, which is optimal for use as an alternative material for nanoelectronics. Product Description popup.authors Solomenko Anastasiia G. popup.nrat_date 2021-12-20 Close