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Registration Number

0221U106816, 0116U008468 , R & D reports

Title

Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures

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Head

Haidar Halyna P., Доктор фізико-математичних наук

Registration Date

21-12-2021

Organization

Institute of Nuclear Research of the National Academy of Sciences of Ukraine

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 An increase in the probability of tunneling breakdown in the green GaP light-emitting diodes (LEDs) and avalanche breakdown in the red GaP LEDs was revealed due to irradiation with 2 MeV fast reactor neutrons. As a result of irradiation of LED structures of AlxGa1-xAs with 1 MeV fast reactor neutrons, a radiation-stimulated increase in the forward current was revealed, caused by the decrease in the concentration of the majority charge carriers and in the lifetime of minority carriers due to the radiation introduction of traps. The optical characteristics of GaAs1-xPx LEDs, initial and irradiated with 2 MeV electrons by fluences of 10^15-10^16 cm^–2, were investigated. Significantly higher radiation hardness of these LEDs was revealed in comparison with their phosphide-gallium counterparts. A twofold influence of ultrasonic treatment on GaP LEDs was established: on the one hand, the destruction of excitons bound on the Zn-O complex and the formation of dislocation networks and mobile dislocation packets, which are regions of nonradiative recombination, and, on the other hand, the promotion of the annealing of radiation defects in the sample and the decrease of the number of microplasmas. It was shown that the use of ultrasonic waves is promising for improving the characteristics of GaP LEDs with a high concentration of defects, especially those irradiated with fast particles. The features of the surface relief of GaP, which is formed under the influence of different types of radiation, were investigated. On the surface of GaP crystals irradiated with high-energy electrons, protons, and alpha particles, nano-hills were found, the shape and size of which were specific for each type of radiation and depended on the mass and energy of the particles. In neutron-irradiated silicon, a reduction in the oxygen precipitation time was obtained due to the additional introduction of precipitate nuclei with the participation of primary radiation defects created by irradiation.

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Varnina Valentyna Ivanivna
Vorobyov Volodymyr Herasymovych
Makykha Oleksandr Mykolaiovych
Malyi Yevhen Viktorovych
Pinkovska Myroslava Bohdanivna
Petrenko Ihor Vitaliovych
Starchyk Margaryta Ivanivna
Tartachnyk Volodymyr Petrovych

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2021-12-21