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Information × Registration Number 0222U000829, 0116U002919 , R & D reports Title A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences. popup.stage_title Head Haidar Halyna P., Доктор фізико-математичних наук Registration Date 19-01-2022 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description2 It was found that in the case of high-energy irradiation with large fluences of hydrogen and helium ions, the defect formation passes through the stage of ordering. It was shown that the presence of dislocations in Si during irradiation with deuterium ions leads to their moved and crossed braking band due to the formation of stacking faults. The optical properties of surface composites "metal-insulator (semiconductor)" obtained by the introduction of plasmon-active Au nanoparticles onto a modified rough Si surface or into a porous layer of SiO2 on the Si surface are investigated. The possibility of controlling the change in the optical parameters of composites during the incorporation/deposition of Au nanoparticles into a porous matrix and additional thermal annealing was shown. Based on the analysis of the results of isochronous annealing of irradiated A^3B^5 crystals, it was concluded that there are self-organization processes in them that are characteristic of nonequilibrium systems. The main feature of such objects is the formation of microvoids with low electron density. The properties of GaAsP LEDs irradiated with 2 MeV electrons were studied. It was revealed that degradation of the electroluminescence intensity is the result of the introduction into the crystal of nonradiative levels of radiation defects and destruction by their fields of the bound excitons. It was found that the areas of negative differential resistance on the current-voltage characteristics are the result of the presence of the GaP sublattice in the solid solution. The effect of oxygen and carbon on the magnetic, micromechanical, and structural properties of Cz-Si crystals after their heat treatment in the range of 700–1100^oС was investigated. A correlation was revealed between changes in the magnetic susceptibility, microhardness, and the rearrangement of structural defects in crystals after their heat treatment. The concentrations and sizes of magnetically ordered clusters are estimated  Product Description popup.authors Yermolchyk Volodymyr Oleksandrovych Varnina Valentyna Ivanivna Vorobyov Volodymyr Herasymovych Lytovchenko Petro Grygorovych Makykha Oleksandr Mykolaiovych Malyi Yevhen Viktorovych Pinkovska Myroslava Bohdanivna Petrenko Ihor Vitaliovych Starchyk Margaryta Ivanivna Tartachnyk Volodymyr Petrovych popup.nrat_date 2022-03-09 Close