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Information × Registration Number 0222U000976, 0121U111035 , R & D reports Title Development of the latest thin-film optoelectronic materials based on bound hybrids of quantum dots and two-dimensional nanostructures popup.stage_title Head Kondratenko Serhii V., Доктор фізико-математичних наук Registration Date 22-01-2022 Organization Taras Shevchenko National University of Kyiv popup.description2 The object of research is the interaction of electromagnetic radiation of the optical range with hybrid 2D-0D nanostructures of dichalcogenides of transition metals and semiconductor quantum dots. The subject of research is light absorption, mechanisms of phototransformation and photoluminescence, processes of photogeneration and recombination of charge carriers in hybrid 2D-0D nanostructures of dichalcogenides of transition metals and semiconductor quantum dots. The purpose of the study is to develop scientific principles for the production of thin films based on hybrid 2D-0D nanostructures of transition metal dichalcogenides and semiconductor quantum dots on substrates of various types, to determine the morphology, optical and photoelectric properties of the obtained films. Research methods - photoluminescence and photoconductivity spectroscopy, atomic force microscopy, optical microscopy, Raman light scattering, temperature measurements of luminescent characteristics. The relationships between thin films morphology, optical and local electrical properties with hybrid 2D-0D nanostructures have been established. The optical characteristics of hybrid films made on dielectric (glass) and semiconductor (Si) substrates were investigated by spectral ellipsometry, photoconductivity spectroscopy and photoluminescence in the temperature range of 10-400 K. The relationship between structural-morphological, optical and electrical characteristics of thin films with individual 2D flakes MoS2 coupled with AgInS2 nanoclusters was determined. The optical response of MoS2 - AgInS2 hetero-systems was modeled, taking into account the spectrum of exciton states of semiconductor nanostructures, which allowed to determine the exciton binding energies and the contribution of interface states.  Product Description popup.authors Babich Danylo Р. Datsenko Oleksandr І. Lunko Tetyana S. Mykytyuk Anastasia О. Poperenko Leonid V. Yampolsky Andriy L. popup.nrat_date 2022-03-09 Close