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Information × Registration Number 0223U000253, 0120U101332 , R & D reports Title Optical properties modification of silicon structures and rare-earth containing oxide and chalcogenide materials via methods of plasmon resonance popup.stage_title Head Kushlyk Markijan O., Кандидат фізико-математичних наук Registration Date 05-01-2023 Organization Ivan Franko National University of Lviv popup.description2  The object of the research: Ga2O3 doped with transition metal ions (PM) and rare earth elements (REE); garnets based on (Mg, Ca) - (Al, Ga, In, Zr, Hf, Si, Ge, Sn, V), doped with Bi3+ ions; surface-barrier and light-emitting structures based on p-Si; chalcogenide glass-like semiconductors doped with RZM ions; plasmonic structures based on metal (Au, Ag, Al, Ni) nanoparticles (NPs). The aim of the work: modification of new and existing materials of photonics and research of sensory, electrophysical and optical-luminescent properties of the object of the research with nanostructuring of their surface with metal NPs for increasing the efficiency of the new sensors of ionizing radiation, temperature, and white light LEDs. Research methods: plasmon modification of the studied materials (YAG, GGG, Ga2O3, Si) was carried out by the magnetron sputtering and the mechano-chemical synthesis methods. The study of structures was carried out with the help of computer modelling, spectral-luminescence methods, microscopy, structural studies of materials, as well as measurement of their electrophysical characteristics. Obtained results. The performed research made it possible to propose the technological details for the production of plasmonic nanostructures and to establish the mechanisms of NPs degradation in environmental conditions. For the first time, studies of low-temperature changes in the optical properties of the plasmon structure (YAG/GGG:Bi,Ce,Yb + Ag NPs) were carried out, and the possibility of their use as non-contact temperature sensors was demonstrated. The possibility of creating, on the basis of modified silicon, high-quality detectors of UV and IR radiation and increasing the efficiency of existing solar cells has been demonstrated. New light-sensitive media based on amorphous equichalcogenide films (Ge20Sb20S20Se20Te20) with promising characteristics for use in sensors and photovoltaic technology were obtained. Product Description popup.authors Bulyk Lev-Ivan I. Kravets Oleg P. Kushlyk Markiyan O. Mahlovanyi Bohdan D. Maly Taras S. Slobodzyan Dmytro P. Tsiumra Volodymyr B. Shpotyuk Yaroslav O. popup.nrat_date 2023-01-05 Close