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Information × Registration Number 0223U001129, 0121U110388 , R & D reports Title Physical properties of multi-valley semiconductors and LED structures in radiation, thermal, and deformation fields popup.stage_title Head Haidar Halyna P., Доктор фізико-математичних наук Registration Date 25-01-2023 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description2 It was found that annealing of transmutation-doped n-Si in the temperature range 1323–1373 K leads to an increase in the carrier concentration compared to the initial value due to the appearance of high-temperature thermal donors. It was found that a moderate cooling rate from annealing temperatures not exceeding 1373 K leads to the removal of deep donor levels characteristic of transmutation-doped Si, while the same cooling rate from 1473 K leads to the generation of deep centers. The transient processes that occur during the removal of gamma-irradiated AlxGa1–xAs LED structures from the active zone are analyzed. It was established that the residual degradation of the diode luminescence intensity is due to the radiation-stimulated formation of stable (at 300 K) associations of point defects in the As subsystem. It was found that the existence of prolonged relaxation is due to the presence of dislocation networks in the initial samples. An increase in the forward current of AlxGa1–xAs structures stimulated by fast neutrons in the temperature range 132–300 K was established. It was found that the decrease in the reverse current at high irradiation fluences is due to an increase in the base resistance. It was found that the occurrence of tunneling breakdown in individual samples is due to tunneling at the levels of radiation defects introduced by neutrons. It was shown that at low voltages, an increase in the temperature of the samples leads to a decrease in the forward current, and at high voltages, it leads to an increase. The features of the formation of the С-V characteristics of GaP LEDs – red (doped with Zn and O) and green (doped with N) – under reverse bias are revealed. It was found that the stability of green LEDs is much higher than that of red LEDs; heat treatment up to 683 K has little effect on the reverse saturation current; the breakdown voltage is almost 1.5 times higher than the breakdown voltage of the red diodes.  Product Description popup.authors Yermolchyk Volodymyr Oleksandrovych Varnina Valentyna Ivanivna Vorobyov Volodymyr Herasymovych Litovchenko Petro Grygorovych Makykha Oleksandr Mykolaiovych Malyi Yevhen Viktorovych Pinkovska Myroslava Bohdanivna Petrenko Ihor Vitaliovych Starchyk Margaryta Ivanivna Tartachnyk Volodymyr Petrovych popup.nrat_date 2023-01-25 Close