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Information × Registration Number 0223U002426, 0121U113502 , R & D reports Title Development of technology for the manufacture of heterostructures based on nanoporous silicon for solar cells popup.stage_title Head Kidalov Valerii V., Доктор фізико-математичних наук Registration Date 18-02-2023 Organization Dmytro Motornyi Tavria State Agrotechnological University popup.description2 The object of research is photoelectric converters based on SiC/porous-Si/Si (100) and SiC/porous-Si/Si (111) heterostructures. The purpose of the stage is to develop a technology for manufacturing heterostructures based on nanoporous silicon for solar photovoltaic cells. For the first time, SiC/porous-Si/Si (111) heterostructures were produced using the solid-phase epitaxy method at a processing temperature of 1290°C. The electrongram clearly indicates the epitaxy of the 3C-SiC polytype layer. SiC films are smooth and do not contain duplicates on the surface, the film thickness is ~70 nm. In the destroyed interface between SiC-Si, both cubic and hexagonal phases are present in the ratio of 80% to 20%, respectively. In the photoluminescence spectra both at T=300 K and at T=77 K, a narrow line at a wavelength of ~371 nm is observed. Predominant is luminescence in the region of hexagonal phases, which are contained in the transition region. Using the solid-phase epitaxy method, SiC/porous-Si/Si (100) heterostructures were produced at a processing temperature of 1290°C. According to the results of morphology studies, it was established that the thickness of the film is ~250 nm, and the rms roughness of the SiC film is 59 nm. The point reflections of the electronograms clearly indicate an epitaxial layer of the 3C-SiC polytype. The results of X-ray phase analysis indicate the presence of both cubic and hexagonal phases in the SiC film. The size of the regions of coherent scattering, determined by the Debye-Scherrer formula, is 28.7 nanometers. The obtained photoluminescence spectra of SiC films extended from the ultraviolet region of the spectrum to cover almost the entire visible region of the spectrum. A technological route for the production of solar cells based on SiC/porous-Si/Si heterostructures was developed and their photovoltaic characteristics (short-circuit current, open-circuit voltage, filling factor) were investigated. Product Description popup.authors Dyomina Natalya Anatoliivna Diadenchuk Alona F. Khrypko Serhii Leonidovych popup.nrat_date 2023-02-18 Close