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Information × Registration Number 0223U003019, 0121U112031 , R & D reports Title Radiation resistance investidation and tradiation defects effect on the irradiated with different types particles of InGaN semiconductor structures popup.stage_title Head Malyi Yevhen V., Registration Date 22-03-2023 Organization Institute of Nuclear Research of the National Academy of Sciences of Ukraine popup.description2  LEDs with quantum wells manufactured on the basis of InGaN solid solution were studied in the work. Measurements of current-current and electroluminescence characteristics were carried out in the range of T = 77...300 K. On the I-V curve in the range of 77...150 K, areas of negative differential resistance (DDR) were detected, as well as a fine structure of the radiation spectra. The results of the influence of electron irradiation (Ee = 2 MeV) on the intensity of EL spectra and the quantum yield of the studied samples are presented; the features of the temperature dependence of the glow intensity of irradiated LEDs were revealed. In order to study the specifics of the influence of streams of fast particles, both neutral (γ, n) and charged (electrons with E = 2 MeV) on a rather complex inhomogeneous semiconductor structure with InGaN/GaN quantum wells, samples were irradiated with the mentioned particles. Emissivity, current-voltage characteristics were measured, in particular, low-temperature anomalies that occur on the I/V of InGaN/GaN LEDs at low temperatures, of the original and irradiated samples, were observed. Irradiation with fast particles, as a controlled method of introducing defects of a certain type, can contribute to obtaining additional information about the role of structural disturbances in the formation of the yellow λ2max=550nm and red λ3max=770nm bands of the radiation spectrum when evaluating the degradation constant of the main emission line hν=370nm. The emission spectrum of the studied UV LEDs grown on the basis of InxGa1-xN solution (х = 0.1) consists of three sections λ1max = 370nm, λ2max = 550nm, λ3max = 770nm – the first of them, the most intense UV – band, the last two – yellow and red almost an order of magnitude weaker. UV – luminescence caused by interlevel transitions in the region of ky; two other lines of defective origin. Product Description popup.authors Stratilat Dmytro P. popup.nrat_date 2023-03-22 Close