Search academic texts

Information × Registration Number 0223U004724, 0120U104992 , R & D reports Title Development of selection criteria for single-sector HPHT-diamond plates synthesized using new compositions of carbon solvents, for their use in Schottky diodes and heat sink substrates, substantiation of their design and physical principles of operation. popup.stage_title Head Strelchuk Viktor V., Доктор фізико-математичних наук Registration Date 30-11-2023 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2  The peculiarities of doping and defect formation in various growth sectors of diamond single crystals were investigated using optical and nanoprobe physical methods. Utilizing infrared Fourier transform, Raman and photoluminescence scanning micro-spectroscopy, conducting atomic force microscopy (AFM), electron microscopy, and secondary ion mass spectrometry, we developed and tested methods for visualizing physical parameters across various single-sector growth zones of synthesized high-pressure high-temperature (HPHT) diamond single crystals. The structural quality, defect-impurity composition, surface morphology, and electrophysical parameters of HPHT-diamond single crystals were studied using optical and nanoprobe methods. The structural, morphological, and electrophysical properties of CVD diamond films, including those grown on HPHT-diamond substrates, were studied. The spatial distribution of structural quality, impurity concentration, and defects in synthesized HPHT-diamond single crystals and plates was determined, depending on the technological regimes of their growth. The thermophysical properties of synthesized HPHT-diamond single crystals and plates were investigated using temperature-dependent Raman spectroscopy and transient thermal conductivity measurements. The design and optimization of the structure of Schottky diodes based on HPHT-diamond plates were substantiated, the technology of electrical ohmic contacts and Schottky barriers was developed and tested, the electrophysical characteristics of the manufactured device structures of Schottky diodes were investigated and analyzed. The obtained results were summarized regarding the efficiency of operation and the prospects for the use of Schottky diodes and heat sink substrates based on HPHT-diamond single crystals of high structural perfection with a controlled defect-impurity composition, and the methodological foundations for developing passive and active elements of electronic devices based on the Product Description popup.authors Danylenko Ihor M. Maliuta Serhii Vasylovych Nikolenko Andriy S. Stubrov Yurii Yu. popup.nrat_date 2023-11-30 Close