Search academic texts

Information × Registration Number 0223U004844, 0123U102736 , R & D reports Title Development of advanced thin film optoelectronic materials based on coupled hybrids of quantum dot and two-dimensional nanostructures popup.stage_title Head Kondratenko Serhii V., Доктор фізико-математичних наук Registration Date 06-12-2023 Organization Taras Shevchenko National University of Kyiv popup.description2 The object of research is the interaction of electromagnetic radiation of the optical range with hybrid 2D-0D nanostructures of dichalcogenides of transition metals and semiconductor quantum dots. The subject of research is light absorption, mechanisms of phototransformation and photoluminescence, processes of photogeneration and recombination of charge carriers in hybrid 2D-0D nanostructures of dichalcogenides of transition metals and semiconductor quantum dots. The purpose of the study is to develop scientific principles for the production of thin films based on hybrid 2D-0D nanostructures of transition metal dichalcogenides and semiconductor quantum dots on substrates of various types, to determine the morphology, optical and photoelectric properties of the obtained films. Research methods - photoluminescence and photoconductivity spectroscopy, atomic force microscopy, optical microscopy, Raman light scattering, temperature measurements of luminescent characteristics. The relationship between the morphology, optical, and local electrical properties of thin films with hybrid 2D-0D nanostructures has been established. Using spectral ellipsometry, photconductivity spectroscopy, and photoluminescence, a complex set of optical characteristics of hybrid films manufactured on dielectric (glass) and semiconductor (Si, GaAs) substrates has been investigated. The correlation between structural morphology, optical, and electrical characteristics of thin films with individual 2D MoS2 flakes linked to AgInS2 nanoclusters, MoS2 quantum dots has been determined. Research on the optical response and photosensitivity of heterosystems MoS2/AgInS2, CdTe/Si, InAs/GaAs, GeSn/Ge/Si, taking into account the spectrum of electronic states of semiconductor quantum-confined nanostructures (0D, 2D), has been conducted. Product Description popup.authors Datsenko Olexander I. Kovanzhi Petro O. Lunko Tetyana S. Mykytyuk Anastasia О. Poperenko Leonid V. Smaliuk Andrii P. popup.nrat_date 2023-12-06 Close