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Information × Registration Number 0223U005145, 0117U003185 , R & D reports Title Investigation of adsorption processes and transport phenomena in semiconductor structures with a surface layer, modified with physical and chemical methods popup.stage_title Head Masleeva Natalya V., Кандидат фізико-математичних наук Registration Date 15-12-2023 Organization Odessa I. I. Mechnikov National University popup.description2  The mechanism of influence of the doping level on the gas sensitivity of silicon-based p n junctions has been established. A significant improvement of the parameters of p n junctions as gas sensors was achieved by surface doping. The peculiarities of GaP-InGaP heterojunctions obtained by laser doping are revealed. It is shown that such heterojunctions obtained under certain technological conditions exhibit electroluminescent properties, and as photovoltaic energy conv The influence of sulfide modification modes of the surface in an aqueous solution of sodium sulfide on the volt-ampere characteristics and gas sensitivity of GaAs-based p-n junctions has been studied. It was found that short-term treatment reduces the forward and reverse currents in the pre-breakdown region and increases the sensitivity to ammonia vapour, which is the result of a decrease in the density of surface states of the p- and n-junction interface. An increase in the treatment duration was accompanied by a decrease in the effect of improving the volt-ampere characteristics and a decrease in the achieved gas sensitivity. In the dependences of the magnitude of the current decrease on the duration of sulfide surface modification, maxima were observed, after which the decrease in current changes began. This can be explained by an increase in the density of surface states of p-n junctions due to an increase in mechanical stresses during the formation of a gallium sulfide layer on the surface during long-term sulfide treatment. The study of the photocurrent spectra before and after surface modification showed an increase in photosensitivity in the infrared region of the spectrum. Product Description popup.authors Masleeva Natalya V. Pasternak Natalia M. Ptashchenko Oleksandr O. Stukalov S. A. Sergey A. popup.nrat_date 2023-12-15 Close