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Information × Registration Number 0223U005156, 0123U103764 , R & D reports Title Plasmonic light trapping for highly efficient thin films solar cells popup.stage_title Head Yevtukh Anatolii A., д.ф.-м.н. Registration Date 15-12-2023 Organization V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine popup.description2 The report is presented in one volume: 45 p., 10 figs, 1 table, 67 sources. Keywords: ION PLASMA TECHNOLOGY, NANOCOMPOSITE FILMS, OXIDE MATRICES, OPTICAL PROPERTIES, STRUCTURE AND COMPOSITION, PLASMONICS, Al FILMS, TECHNOLOGIES, THERMAL ANNEALS, PHOTOVOLTAICS. The object of research is the ion-plasma technology of obtaining of the nanocomposite films and the technology of obtaining of the ultra-thin aluminum films. The purpose of this stage of the project is to develop the technology of forming silicon-enriched nanocomposite films SiOx(Si) and SixOyNz(Si) with silicon nanocrystals and the processes of forming Al nanoparticles on the surface of the silicon substrate. As a result of this work, the ion-plasma deposition technology of silicon-enriched nanocomposite films SiOx(Si), SiOxNy(Si) and SiAlzOxNy(Si) with silicon nanocrystals was developed and their structural and optical characteristics were investigated. It was established that the films had low absorption and significant transparency in the UV-visible range - near-IR spectral region. Al atoms are in the bound state (metal particles are not formed). The technology of forming of the ultra-thin Al films was developed and the effect of thermal annealing on the structure and optical properties of the films was established. It was found that after thermal annealing, the Al film becomes porous. The drop in optical transmittance in the short-wavelength region can be the long-wavelength shoulder of the localized surface plasmon resonance band in aluminum nanoparticles. Such the band is useful for photovoltaics to absorb light in the UV range. The improvement in the reflectivity of p-Si/Al/SiOx structures in the long-wave range of 620...920 nm has been established. The obtained results can be applied to the formation of the p-Si/Al/SiOx structure on the back side in the manufacture of thin film solar cells. Product Description popup.authors Yevtukh Anatolii A. Antonin Serhii Volodymyrovych Bratus Oleg Leonidovich Muryi Yaroslav Yuriyovych Pylypova Olha Fedorenko Leonid Leonidovych popup.nrat_date 2023-12-15 Close