Search academic texts

Information × Registration Number 0224U001082, 0123U101196 , R & D reports Title Mass spectrometric studies in the technology of manufacturing multi-element IR photodetectors based on indium antimonide popup.stage_title Head Dubikovskii Oleksandr V., Кандидат фізико-математичних наук Registration Date 17-01-2024 Organization VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 In the process of manufacturing InSb-based photodiodes, the dielectric coating of the plate surface can be used as an encapsulating coating during annealing of ion-implanted structures and a passivating coating of the diode structure. The processes of passivation of diode structures were investigated and it was shown that silicon oxynitride films are optimal coatings. The technology of deposition of oxide nitride films was optimized using mass spectrometric analysis. The technology has been developed and experimental samples of IR photodetectors for the 3-5 micron range of the spectrum have been manufactured. Product Description popup.authors Dubikovskii Oleksandr V. popup.nrat_date 2024-01-17 Close