Search academic texts

Information × Registration Number 0224U002059, 0123U103438 , R & D reports Title Innovative Solar Cells popup.stage_title Head Nazarov Oleksii M., д.ф.-м.н. Registration Date 05-02-2024 Organization V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine popup.description2  As part of the implementation of the project, work was carried out to develop the technology and study the physical properties of metal contact on glass and flexible polymer substrates, a thin layer of a photon absorber based on four (five) component chalcopyrite alloys Cu(In,Ga)Se2 (CIGS) and Cu( In,Ga)SeS (CIGSS) and a thin cadmium-free wide-gap semiconductor buffer layer such as ZnS or ZnOS. The main technology of applying materials is HF plasma magnetron sputtering. Within the framework of this project, a multilayer Mo-CIGSS-ZnS(ZnOS) structure with a photosensitive CIGSS layer and a low-defect boundary between the CIGSS/ZnS(ZnOS) layers was obtained using low-temperature technologies (up to 350°C). The best photosensitivity results were obtained on the CIGSS chalcopyrite alloy after additional low-temperature annealing in H2S to increase the sulfur concentration in the near-surface layer of the adsorber and to passivate defects to reduce the recombination of electron-hole pairs; the band gap in the CIGSS layer after treatment in hydrogen sulfide reached 1.2 eV. Using the method of layer-by-layer ion deposition from a solution, ZnS(ZnOS) buffer layers were deposited on the surface of the CIGSS adsorber layer with a concentration of surface states at the interface between the CIGSS/ZnS(ZnOS) layers from 2x10^10 to 6x10^10 eV^(-1 )×cm^(-2). Thus, multilayer heterostructures of Mo/CIGSS/ZnS(ZnOS) were created on glass and flexible polymer substrates, which represent the basic structure for the further creation of a solar cell. Product Description popup.authors Vlasiuk Viktor M. Homeniuk Yurii V. Kysil Dmytro V. Kondratenko Sergiy V. Kostylyov Vitaly P. Okholin Pavel M. Rusavskyi Andrii V. Tiahulskyi Ihor P. popup.nrat_date 2024-02-05 Close