Registration Number
0224U002059,
0123U103438
, R & D reports
Title
Innovative Solar Cells
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Head
Nazarov Oleksii M., д.ф.-м.н.
Registration Date
05-02-2024
Organization
V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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As part of the implementation of the project, work was carried out to develop the technology and study the physical properties of metal contact on glass and flexible polymer substrates, a thin layer of a photon absorber based on four (five) component chalcopyrite alloys Cu(In,Ga)Se2 (CIGS) and Cu( In,Ga)SeS (CIGSS) and a thin cadmium-free wide-gap semiconductor buffer layer such as ZnS or ZnOS. The main technology of applying materials is HF plasma magnetron sputtering. Within the framework of this project, a multilayer Mo-CIGSS-ZnS(ZnOS) structure with a photosensitive CIGSS layer and a low-defect boundary between the CIGSS/ZnS(ZnOS) layers was obtained using low-temperature technologies (up to 350°C). The best photosensitivity results were obtained on the CIGSS chalcopyrite alloy after additional low-temperature annealing in H2S to increase the sulfur concentration in the near-surface layer of the adsorber and to passivate defects to reduce the recombination of electron-hole pairs; the band gap in the CIGSS layer after treatment in hydrogen sulfide reached 1.2 eV. Using the method of layer-by-layer ion deposition from a solution, ZnS(ZnOS) buffer layers were deposited on the surface of the CIGSS adsorber layer with a concentration of surface states at the interface between the CIGSS/ZnS(ZnOS) layers from 2x10^10 to 6x10^10 eV^(-1 )×cm^(-2). Thus, multilayer heterostructures of Mo/CIGSS/ZnS(ZnOS) were created on glass and flexible polymer substrates, which represent the basic structure for the further creation of a solar cell.
Product Description
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Vlasiuk Viktor M.
Homeniuk Yurii V.
Kysil Dmytro V.
Kondratenko Sergiy V.
Kostylyov Vitaly P.
Okholin Pavel M.
Rusavskyi Andrii V.
Tiahulskyi Ihor P.
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2024-02-05
