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Information × Registration Number 0224U002084, 0121U111699 , R & D reports Title Physics of interaction of materials based on of chalcogenide semiconductor and quasi-crystalline film systems with ultrahigh-frequency electromagnetic radiation and powerful radiation influence popup.stage_title Head Malykhin Serhii V., Доктор фізико-математичних наук Registration Date 05-02-2024 Organization National Technical University "Kharkiv Polytechnic Institute" popup.description2  The objects of research are the regularities of changes in the physical properties of device structures based on semiconductor and quasicrystalline film systems, which occur under the influence of pulsed electromagnetic radiation of the microwave and hydrogen plasma. The aim of this work is to establish new effects and regularities of changes in the structural state and physical, electrophysical and physicomechanical properties of semiconductor and quasicrystalline functional film systems when interacting with microwave electromagnetic radiation and powerful radiation-plasma exposure. Research methods: X-ray diffraction and X-ray fluorescence analyses, methods of electron-optical analysis, electrical measurements, and vacuum methods for obtaining thin films in particular. The established regularities of changes in the structural-phase state, substructure, and individual physical properties of Ti-Zr-Ni system films depend on the conditions of their fabrication. Additionally, the patterns of behavior of quasicrystalline and metal-quasicrystalline layered systems under the influence of radiation-thermal effects were studied. New insights into the regularities of the stress state and surface morphology variations in quasicrystalline functional materials were obtained, which could be utilized under conditions of intense cyclic radiation and thermal loads. The physical foundations for creating stable quasicrystalline materials for nuclear and thermonuclear energy were developed. Kinetic processes of switching between high and low electrical resistance states in CdTe films were investigated, and physical models for these processes were developed. A radiation-resistant photosensitive device structure based on CdS/CdTe, suitable for use as a radiation sensor, was created. Device structures Mo/CdTe/Mo were developed, capable of serving as elements for protecting radio frequency equipment from electromagnetic pulses, functioning as resistive memory elements. Product Description popup.authors Baturin Oleksiі A Bohdanov Yuriі S Borysova Svitlana S. Dobrozhan Andriі I. Kirichenko Mykhailo V. Kopylets Ihor A Lіubov Viktor М. Makhlaі Vadym O. Meriuts Andrii V. Mykhailov Anton I. Rudchenko Svitlana O. Surovytskyі Serhiі V. Fomina Larysa P Khrypunov Нennadiі S. Khrypunov Maksym H. popup.nrat_date 2024-02-05 Close