Registration Number
0224U002412,
0122U200830
, R & D reports
Title
Development of technology for growth of structures based on indium antimonide and production of test samples of photodiodes
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Head
Krukovskyi Semen I., д.т.н.
Registration Date
13-02-2024
Organization
Scientific Research Company "Electron-Carat"-Branch of Private Joint Stock Company "Concern-Electron"
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Developed and manufactured technological equipment for the growth of p-InSb/n-InSb structures by the method of liquid-phase epitaxy using pulsed cooling of a saturated solution-melt; the technology of growth of p-InSb/n-InSb epitaxial structures was developed and tested. Technological instructions for the growth of p-InSb/n-InSb epitaxial structures were developed, experimental samples of structures and test samples of mesa photodiodes were made. Techniques for controlling the parameters of structures and mesa photodiodes have been developed. The methods of X-ray diffractometry and secondary ion mass spectrometry and isotopic analysis confirmed the high structural perfection of the RFE-grown p-InSb epitaxial layers and the presence of a Cd alloying impurity in them. Programs and methods were developed and preliminary and acceptance tests of experimental p-InSb/n-InSb structures and test samples of mesa photodiodes were carried out, which confirmed the compliance of the parameters of the manufactured structures with the requirements of the Technical Task. The final Report on Scientific and Technical Work has been prepared.
Product Description
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Izhnin Ihor I.
Kost Yaroslav Ya.
Krukovs'kyi Semen I.
Prytulyak Bohdan B.
Rejkin Borys O.
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2024-02-13
