Звіт по науково-дослідній роботі. Мельник Віктор Павлович. Створення базових технологій формування напівпровідникових матеріалів і структур для нано- та оптоелектроніки
Head: Melnyk Viktor P.. Creation of basic technologies for the formation of semiconductor materials and structures for Nano - and optoelectronics. (popup.stage: Створення базових технологій формування напівпровідникових матеріалів і структур для нано- та оптоелектроніки).
V. Lashkaryov Institute of Semiconductor Physics of National Academy. № 0224U002739
Conducting applied research in order to solve actual problems of modern semiconductor materials science, creating basic technologies for obtaining materials and structures in the IFN of the National Academy of Sciences of Ukraine, which are in demand: in modern optoelectronic and sensor devices, to ensure the development of modern diagnostic methods, improving existing and creating new power and radiation sources.
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The work was aimed at carrying out applied research in order to solve the current problems of modern semiconductor material science, namely for the manufacture and research of experimental samples of semiconductor devices and sensor systems of the new generation, as well as efficient solar energy converters.
The object of research is new properties of materials (with specified physical parameters), which were obtained to solve fundamental problems of solid state physics and which will allow creating new nano- and optoelectronic devices with high efficiency.
The purpose of the work is to develop new technologies for obtaining semiconductor structures with the further creation of modern devices of opto- and photoelectronics, micro- and nanoelectronics, infrared and sensor technology based on them.
Research methods are the comprehensive approach which was applied in the use of methods and means of obtaining semiconductor materials and systems of modern optoelectronics, micro/nanoelectronics, infrared, sensor and information technology. New methods of characterization and diagnosis of the specified structures were developed and started, in particular, optical, acoustic, structural and elemental analysis, etc.
Scientific work was carried out in four interrelated directions: 1. Optoelectronics, solar energy and energy-saving technologies; 2. Creation of an elementary base of microwave, THz, IR photoelectronics; 3. The latest sensor devices and systems; 4. New analytical methods of the parameters controlling of structures and materials: X-ray and nanoprobe methods.
In the process of work performing using theoretical models and experimental methods, a number of scientific and applied results were obtained, namely: - The technology of manufacturing of 1280x1024 photo array with line-by-line reading and electron multiplication (registered in the Ministry of Education and Culture of Ukraine No. 0623U000106); - The technology of obtaining the thin layers of highly porous nitrid
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