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Information × Registration Number 0224U031689, 0122U000129 , R & D reports Title Search for optimal conditions for the synthesis of nanostructures on the surface of A3B5, A2B6 and silicon semiconductors for photonics and solar energy popup.stage_title Head Suchikova Yana O., Доктор технічних наук Registration Date 05-06-2024 Organization Berdiansk State Pedagogical University popup.description2  As a result of the first stage of the work, the formation and properties of the complex nanostructure AlxGa1− xAs on the surface of single-crystal gallium arsenide and the dependence of the parameters on the "x" coefficient, as well as the stability of the nanostructure, were investigated. A layer of gallium oxide Ga2O3 was synthesized on the mono-GaAs surface. The stabilization parameters of this layer were studied and specific synthesis conditions were established. The growth mechanism of β-SiC on the silicon surface was investigated, in particular it was established that such structures are formed by the Stransky-Kostanov mechanism. Oxide passivating layers were formed on the surface of InP, the conditions for the formation of periodic parquet-like structures were investigated, and the conditions for the formation of different types of pores were established depending on the orientation of the crystal and technological parameters, and the mechanisms of modification of the crystal surface were also explained. The formation of porous layers on the surface of GaAs by electrochemical etching was studied for various electrolyte compositions and synthesis conditions, which allowed significant progress in understanding ways to optimize synthesis technologies for the industrial production of por-GaAs. Product Description popup.authors Sychikova Yаna O. TsybulIak Nataliia Yu. popup.nrat_date 2024-06-05 Close