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Information × Registration Number 0224U032848, (0123U103494) , R & D reports Title Development of the latest manufacturing technology of a silicon avalanche photodiode for the near-infrared region of the spectrum popup.stage_title Розробка технологічного маршруту та виготовлення експериментальних лавинних фотодіодів Head Melnyk Viktor P., Доктор фізико-математичних наук Registration Date 09-12-2024 Organization V. Lashkarev Institute of Semiconductor Physics of National Academy of Sciences of Ukraine popup.description1 The goal of the project is to develop a new design and original manufacturing technology of a silicon avalanche photodiode with an absorption wavelength of 1.06μm and a sensitivity of no worse than 60A/W. Preparation of technical documentation for the organization of the production of these photo-receiving devices at the "Rhythm". popup.description2  As part of the second stage of the project, the design documentation of the LFD crystal was developed and the manufacturing technology of the LFD using a polysilicon emitter and boron and phosphorus implantation was developed, as well as experimental samples were manufactured, which were tested together with the "Rytm". "Rytm" has a section of closed-cycle diffusion-planar technology and manufactures p-i-n photodiodes. The technology can be adapted for the manufacture of avalanche photodiodes. Additional operations were the implantation of phosphorus and boron, which at the initial stage of implementation can be performed at the Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine. Product Description popup.authors Hora Serhii Т. Hudz Ruslan H. Dubikovskyi Oleksandr V. Korotieiev Vadym V. Kosulia Oleksandr V. Kulbachinskyi Oleksandr A. Maksymenko Zoia V. Melnyk Viktor Р. Oberemok Oleksandr S. Sapon Serhii V. Sydor Oleh M. Shumyliak Mykhailo P. popup.nrat_date 2024-12-09 Close