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Information × Registration Number 0225U000260, (0124U003809) , R & D reports Title Generation and recombination of non-equilibrium charge carriers in GeSn alloys popup.stage_title Фотопровідність сполук GeSn. Створення нових експериментальних засобів дослідження фотопровідності при модульованому збудженні та визначення функції густини станів сполук GeSn Head Kondratenko Serhii V., Доктор фізико-математичних наук Registration Date 08-01-2025 Organization Taras Shevchenko National University of Kyiv popup.description1 Clarifying the processes of recombination of charge carriers and transfer of photoexcitation energy in GeSn compounds, which would allow to acquire a fundamental knowledge necessary for application in optoelectronics for detection of the radiation in near-infrared range. A scientific basis will be created for the analysis of time and spectral characteristics of the photosensitivity depending on the tin content, extent of the structural disordering, strains, and presence of deep defect states. popup.description2 The goal of the project is to establish the course of the processes of recombination of charge carriers and photoexcitation energy transfer in GeSn compounds, which will allow acquiring fundamental knowledge necessary for applied applications in optoelectronics for recording near-infrared radiation. Scientific foundations will be created for controlling the temporal and spectral characteristics of photosensitivity depending on the tin content, the degree of structural disorder, the magnitude of deformations, and the presence of deep defect levels. The main objectives of the Project: (1) to establish the mechanisms of photoexcitation relaxation in compounds of different component composition and determine the nature of their change with increasing tin content; (2) to establish the main correlations between the morphology (structure) of materials and their ability to record infrared radiation in the range of 780-4000 nm; (3) to develop a direct-gap semiconductor with high absorption capacity and photoresponse in the infrared range; (4) determine the density of states function in the band gap and its relationship with the structure/morphology of the material; (5) establish the main parameters of the adhesion and recombination centers and determine their role in the formation of the photoresponse to infrared excitation; (6) determine the effect of tin segregation on the surface of the films and mechanical deformations on the spatial distribution of the surface potential and the lifetime of photogenerated charge carriers; (7) investigate the possibility of using thin films based on GeSn/Ge/Si heterostructures in photodetectors. Product Description popup.authors Datsenko Oleksandr I. Kovanzhi Petro O. Maliuta Serhii V. Yablochkova Kateryna S. popup.nrat_date 2025-01-08 Close