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Information × Registration Number 0225U001247, (0123U100485) , R & D reports Title Semiconductor materials with nanostructured surfaces for new means of communication, infrared vision and information technologies popup.stage_title Напівпровідникові матеріали з наноструктурованими поверхнями для нових засобів зв’язку, інфрачервоного бачення та інформаційних технологій Head Bieliaiev Oleksandr Ye., Доктор фізико-математичних наук Registration Date 28-01-2025 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 The purpose of the work is the development of technologies of hybrid structures based on semiconductors with nanostructured surfaces and their research for the purpose of applications in the latest means of communication, infrared vision systems and information technologies. popup.description2 The nonlinear effects of the resonant interaction of intense and spectrally narrow terahertz (THz) pulses with plasmonic oscillations of the two-dimensional electron gas in multi-gate structures based on AlGaN/GaN have been investigated within the framework of THz probe-pump spectroscopy using a free-electron laser. Qualitative and quantitative explanations of the experimental results were obtained within the theoretical approach based on finite-difference time-domain simulations of Maxwell's equations, combined with electron transport equations within the hydrodynamic model of viscous fluid, which includes inelastic electron-optical phonon scattering mechanisms. The strong interaction between graphene plasmons and surface optical phonons of the polar substrate was considered. A method for optimizing the plasmonic characteristics of such surface-relief-phase periodic structures with device applications has been proposed. This method allows for an increase in the yield of usable products (from 30% to nearly 60%) during their fabrication by interference lithography using chalcogenide photoresists. Experimental samples of plasmonic structures based on Au nanowires with electrical contacts were fabricated using interference photolithography with chalcogenide photoresists, and their morphological, optical, and electrical characteristics were studied. Multilayer designs of infrared (IR) camouflage coatings have been developed, which allow reducing the temperature contrast of the masked object by at least 1.5 – 2 times, corresponding to a predicted reduction in the detection range of the object by 33%. This is promising for practical use in infrared camouflage for military equipment. Product Description popup.authors Indutnyi Ivan Z. Kaliuzhnyi Vladyslav V. Kondratenko Olha S. Korotieiev Vadym V. Kosulia Oleksandr V. Kochelap V'iacheslav O. Kukhtaruk Serhii M. Lytvyn Petro M. Lunko Tetiana S. Liashchuk Yurii M. Mamykin Serhii V. Mamontova Iryna B. Melnyk Viktor P. Mynko Viktor I. Nikolenko Andrii S. Nasieka Yurii M. Oberemok Oleksandr S. Raichev Oleh E. Romaniuk Volodymyr R. Sokolov Valerii M. Strelchuk Viktor V. Tymochko Mykola D. Fedulov Viktor V. Shtykalo Oleksandr V. popup.nrat_date 2025-01-28 Close