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Information × Registration Number 0225U002519, (0122U002642) , R & D reports Title Modification of structural perfection and ordering the complex of intrinsic point defects in crystals of A2B6 compounds by improving the methods of their growing and heat treatment. popup.stage_title Модифікація структурної досконалості та упорядкування комплексу власних точкових дефектів в кристалах сполук A2B6 шляхом удосконалення методик їх вирощування і термообробки. Head Boiaryntsev Andrii Yu., Доктор технічних наук Registration Date 18-03-2025 Organization Institute for scintillation materials NAS Ukraine popup.description1 To determine the mechanisms of forming structural inhomogeneities of electrically charged defects and macrohomogeneities in crystals of A2B6 compounds, that degrade the optical and electrical characteristics of semiconductors. Using technological techniques to determine the possibility of controlled effects on defect concentrations and charge states and optimize the parameters of semiconductor detector elements. popup.description2 The synthesis conditions have been determined and laboratory techniques for synthesizing semiconductor compounds ZnSe, ZnTe and CdTe from elementary components have been developed, ensuring the production of materials with high chemical purity, uniform stoichiometric composition and high yield of target products. The optimal conditions for obtaining Cd1-xZnxTe (x=0.05÷0.15) charge and growing high chemical purity and structurally perfect semiconductor crystals of ZnSe, CdTe, ZnTe and Cd(Zn)Te have been determined using the Bridgman method (VBM) from the melt in a vertical furnace and the traveling heater method (THM) from the melt in a tellurium solution. Experiments on crystal growth using the THM method for CdTe, Cd(Zn)Te and the VBM method for Cd(Zn)Te, ZnTe, ZnSe have been carried out. Laboratory techniques for growing and heat treatment CdTe and Cd(Zn)Te crystals have been developed. The optimal conditions for cutting and polishing semiconductor crystals have been determined, achieving minimal surface roughness and thickness of the disturbed layer. The structural perfection of the obtained crystal samples has been studied using X-ray diffraction analysis, optical IR microscopy, and chemical etching. The concentrations of micro- and macrodefects in crystal samples of CdTe, Cd(Zn)Te and ZnSe have been determined depending on the conditions of their production. The conditions and mechanisms of the formation of electrically charged defects and structural inhomogeneities in these crystals, which degrade the parameters of semiconductor detectors, have been established. Optical transmission spectra in the visible and IR ranges, current-voltage characteristics, electrical resistance and energy resolution of the experimental detector element samples have been studied, depending on the conditions of their production and processing. Product Description popup.authors Yelisieiev Dmуtro A. Yelisieieva Оksana V. Yemelianov Oleksii Yu. Yefimova Svitlana L. Aleksieiev Vadym D. Aslanov Andrii V. Barannik Serhii V. Borovyi Ihor A. Boiaryntsev Andrii Yu. Boiaryntseva Yanina A. Varych Andrii H. Vashchenko Olha V. Volokitin Yurii O. Halkin Serhii M. Hryhorova Hanna V. Hrynov Borys V. Hryppa Oleksandr Yu. Hubenko Kateryna О. Datsko Yurii M. Driuk Taisa M. Dubovyk Oleksandr M. Dyomin Оleksandr V. Zhmurin Petro M. Zavora Liudmyla M. Zosym Dmytro I. Kavok Nataliia S. Karavaieva Nataliia L. Kasian Natalia O. Klochkov Volodymyr K. Kovalchuk Serhii M. Kolesnikov Oleksandr V. Kolesnykova Olena V. Kosynov Vasyl V. Krech Anton V. Lazariev Ihor V. Lalaiants Oleksandr I. Lysetskyi Lonhin M. Lohvyn Pavlo O. Lopatin Artem I. Minenko Serhii S. Maksymchuk Viktoriia V. Maksymchuk Pavlo O. Martynenko Yevheniia V. Makhota Serhii V. Меlnyk Іryna О. Nahorniak Volodymyr T. Nazarenko Mykola V. Nepokupna Tetiana A. Novhorodtsev Volodymyr O. Onyshchenko Hennadii M. Opolonin Oleksandr D. Pylypenko Ihor Yu. Polupan Yaroslava I. Ponomarenko Tamara V. Popkova Olena V. Rebrov Oleksandr L. Rebrova Nadiia V. Rebrova Tetiana P. Rybalka Iryna A. Ropakova Iryna Yu. Siedykh Olha O. Sibiliev Mykola L. Sibilieva Tetiana H. Sizov Oleh V. Samoilov Oleksandr M. Sveshnikova Iryna E. Solodovnikova Lidiia M. Sosnytska Olha O. Tinkova Vira S. Tavrovskyi Ihor I. Taraniuk Volodymyr I. Tarasenko Oleh А. Tarvid Stanislav I. Tretiak Serhii O. Tupitsyna Іryna А. Turbaba Dmytro M. Filatov Yurii D. Khromiuk Ilarion F. Cherhynets Viktor L. Shpilinska Oleksandra L. Shtykh Ihor O. popup.nrat_date 2025-03-18 Close