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Information × Registration Number 0225U005038, (0124U003608) , R & D reports Title Development and characterization of 2D MoS2 based MOSFET devices popup.stage_title Дослідження параметрів тестових МДНПТ приладів. Вивчення ефекту ВЧ плазми на тестові МДН ПТ прилади Head Nazarov Oleksii M., д.ф.-м.н. Registration Date 24-12-2025 Organization V. Lashkaryov Institute of Semiconductor Physics of National Academy popup.description1 Fabrication of 2D MoS2 based MOSFET with high-quality interfaces between 2D semiconductor film and dielectric layers and with a minimum charge in the gate dielectric popup.description2 In frames of the scientific and research work the investigations of the influence of RF plasma treatment in gas nitrogen-hydrogen mixture and in argon on electrical and physic-chemical properties of superthin films and microflakes of MoS2 were carried out. It was shown that the used plasma treatments lead to an increase in the stress in the crystal lattice of the MoS2 structure, as well as to a significant decrease in the electrical resistance of thin microcrystalline films and flakes of MoS2. The HF plasma treatment of the formed MoS2/SiO2 transistor structure with a nanothin Al2O3/AlOx layer leads to an increase in the current in the channel and a decrease in the slope of the drain-gate characteristic of the field-effect transistor, as well as a shift of the hysteresis curve towards positive voltages. Electrical characterization of field effect transistors fabricated on MoS2/SiO2/Si structures with an open surface of a single-layer two-dimensional MoS2 film, a closed surface with an Al2O3/AlOx layer, as well as MoS2/Al2O3/Me structures, which were fabricated at the Microelectronic Center for Advanced Technologies in Aachen (Germany), was performed. The main electrical characteristics of the resulting devices were determined: threshold voltage, subthreshold slope, maximum and minimum channel current, density of surface and near-surface states at the MoS2/SiO2 interface. In all structures, hysteresis of drain-gate characteristics was found, which is associated with charge trapping at the intrinsic dielectric/MoS2 interface, which indicates that the nature of these surface states is associated with the MoS2 layer. A method for determining the mobility of charge carriers from the simultaneous measurement of the capacitance of the structure and the current in the channel, which is not affected by changes in the concentrations of charge carriers, is proposed. Product Description popup.authors Слободян Олександр Михайлович Гоменюк Юрій Вікторович Tiahulskyi Ihor P. Назаров Олексій Миколайович Tamara O. Rudenko Dmytro V. Kysil popup.nrat_date 2025-12-24 Close