Registration Number
0226U001794,
(0125U001693)
, R & D reports
Title
Development of electronic countermeasure device structures based on photonic crystals with an active layer of cadmium telluride
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Створення вимірювальних стендів, програмного та методичного забезпечення для проведення досліджень.
Head
Zaitsev Roman V., Доктор технічних наук
Registration Date
31-01-2026
Organization
National Technical University "Kharkiv Polytechnic Institute"
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Development of the physical basics of construction-technological solutions of light-controlled functionally active device structures based on CdTe films for mega and terahertz radio electronics and testing of a laboratory sample of a frequency-selective, light-controlled, photonic crystal switch for millimeter waves and a radio-electronic antenna based on a planar photonic crystal with controllable resonant frequency parameters.
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The Technical Specification for carrying out the research work has been developed. A series of laboratory test benches has been developed and tested to study the transmission and reflection characteristics of millimeter-wave and centimeter-wave radio radiation by CdTe films as functions of wavelength, amplitude, and duration of light pulses incident on their surface, as well as to investigate the technical characteristics of a planar photonic crystal with a defect for a resonant filter in the centimeter-wave radio band and photonic-crystal beam switches for millimeter waves based on cadmium telluride thin-film layers. A software package for theoretical modeling of the transmission and reflection of radio waves has been developed. A study of the influence of carrier concentration and the values of plasma oscillation damping coefficients gn and gp on dispersion spectra made it possible to propose an expression for the dependence g(Ne), which enables obtaining accurate model spectral dependences for the refractive index and reflection coefficient.
A methodology has been developed, and the laboratory test bench has been tested for determining the technical characteristics of planar thin-film flexible high-frequency switches based on the ITO/p-CdTe/p⁺/p-ZnTe device structure, including those fabricated on flexible substrates.
A methodology has been developed, and the laboratory test bench has been tested to determine the wavelength of pulsed monochromatic radiation in the visible range at repetition frequencies up to 100 MHz. The method is based on experimental measurement of the spectral dependence of the photocurrent of a double-sided-sensitive thin-film solar cell SnOₓ:F/CdS/CdTe/ITO. Improved methods for forming CdTe thin films by DC magnetron sputtering and thermal vacuum evaporation have been implemented, and CdTe thin films have been fabricated. Data on the structure, optical, and electrical properties of cadmium telluride thin-film samples have been obtained.
Product Description
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Hennadii S. Khrypunov
Mykhailo V. Kirichenko
Drozdov Anton M.
Andrii V. Meriuts
Kseniia O. Minakova
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2026-01-31
