Registration Number
0226U003770,
(0121U111110)
, R & D reports
Title
Development on the basis of semiconductor crystals and thin films devices of electronics and phtovoltaics
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Розробка на основі напівпровідникових кристалів та тонких плівок приладів електроніки та фотовольтаїки
Head
Maistruk Eduard V., Доктор фізико-математичних наук
Registration Date
18-05-2026
Organization
Yuriy Fedkovych Chernivtsi National University
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Development of technological modes of manufacturing new and little-studied heterojunctions by applying thin films of perovskite, graphite, oxides and nitrides of metals on semiconductor crystals for use in electronics, solar energy and for detecting high energy particles; study of their structural, electrical, photoelectric and detecting properties at different temperatures, frequencies of the measuring signal under the action of γ-rays of different energy using new methods to determine the dominant mechanisms of current transfer and barrier parameters.
To achieve the project goal, modern complex technological and measuring methods will be used, which will ensure the reliability of the results and thus offer adequate models and mechanisms of phenomena in the studied devices and ways to improve their parameters.
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The work is focussed on the development of technological aspects of the deposition of perovskites, graphite, oxides and nitrides of metals thin films as well as on the ivestigation of their physical properties and development of technological processes to fabricate new and unstudied heterojunctions by the transfer of perovskites, graphite, oxides and nitrides of metals films on semiconductor crystals with reproducible properties for the application in electronics, photovoltaics and detecting high energy photons; analysis of their structural, electrical, photoelectrical and detecting properties at different temperatures, frequencies, under irradiation by γ-rays with different energy by means of new methods in order to determine the dominant charge transport mechanisms and barrier parameters. Also, the analysis of energy losses will be carried out in the heterojunctions under investigation. There will be developed possible technological approaches to eliminate these losses in order to increase the performance of the fabricated semiconductor devices.
Product Description
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Nichiy Sergiy V.
Andrii I. Mostovyi
Ivan Р. Koziarskyi
Koziarskyi Dmytro P
Chupyra Serhiy M
Slyotov Oleksiy Mykhailovych
Ul'yanyts'kyj Kostyantyn S
Strebezhev Viktor Mykolajovych
Yuriychuk Ivan M.
Andrushchak Halyna O.
Ilashchuk Maria I.
Grushka Olena Grygorivna
Eduard V. Maistruk
Ivan H. Orletskyi
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2026-05-18
