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Information × Registration Number 0299U000742, 0199U002795 , R & D reports Title Investigation and application development of silicon nanostructures popup.stage_title Head Torchyns'ka T.V., Registration Date 09-04-2001 Organization Institute of Semiconductor Physics popup.description2 Investigated object - porous silicon (PS). Project goal - investigation of porous silicon photoluminescence excitation mechanism and role of silicon crystallite surface in this process.Methods of investigation - measurement of photoluminescence (PL) and its excitation (PLE) spectra, SIMS, XPS, IR-absorption, EPR. Effect of anodization regime parameters on PL characteristics and chemical composition of PS has been investigated. It is shown that PL peak position depends on both preparation regimes and excitation light wavelength. PLE spectrum consists of three bands (two ultraviolet and one visible) and spectrum shape is caused by relation of these band intensities. Increase of anodization time leads to the increase of PL intensity and visible PLE band amplitude. Rise of anodization сurrent density results in both decrease of PL intensity (without creation of non-radiative recombination centers) and increase of relative contribution of ultraviolet PLE bands, as well as silicon dioxide contribution in o xide layer on silicon crystallite surface. It was established that character of PL changes during aging at the air at room temperature depends on excitation light wavelength. The PS aging process is accompanied by two processes - desorption of some electrolyte components and oxidation. It was shows that decrease of PL intensity after thermal treatment is due to desorption of some substances from porous layer surface with activation energy 0,5±0,1 eV with creation of non-radiative recombination centers which are silicon oxide dangling bonds. Proposals for application of studied object - using for the creation of various type sensors. Product Description popup.authors popup.nrat_date 2020-04-02 Close