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Information × Registration Number 0301U007172, 0194U010760 , R & D reports Title Creation phisicist of techological bases modeficatsiy of properties kvantovo of proportions epitacsiy of layers and gettero of structures on the basis of connection GaAs with the help ionno of beam processing with the purpose of formation of planar elements and devices micro and opto of electronics. popup.stage_title Розробка і створення фізико-технологічних основ модифікацій властивостей квантово-розмірних епітаксіальних шарів і гетероструктур на основі сполук GaAs Head Ivashchuk A.V., Registration Date 26-10-2001 Organization "Saturn" scientific&productive open joint-stock company popup.description2 The work was directed on develoopment of transistors with a large movement electronov of a type NEMT, and also creation of structures for gettero of lasers, in work is carried out (spent) researth fizico of technological processes of formation of epitacsiay of structures GaAs,and kwantovo of proportions gettero of structures on a basis GaAs by a method molekulayrno beam epitaksiy (MPE) and modeficathon of their features with the help ionno of beam processing with the purpose of formation of planar elements and devices micro and opto of electronics. Is made and researth experimental sampples of sppheres, are structure and gettero of structures two measure by electronic gas on a basis GaAs. Product Description popup.authors popup.nrat_date 2020-04-02 Close