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Information × Registration Number 0302U001509, 0100U002618 , R & D reports Title The study of correlation between spectrometric properties of semiconducting CdZnTe crystals and growth defects. popup.stage_title Вирощування і відпал кристалів CdZnTe. Виготовлення експериментальних зразків і вивчення ростових дефектів Head Komar V.K., Registration Date 12-03-2002 Organization Department of Optical and Constructional Crystals of STC <Institute for Single Crystals> popup.description2 It is shown that specific conditions of growing CZT from the 3-component melt under high pressure of the inert gas prespecify formation of different structure defects and inhomogeneities in crystals. A direct correlation between the shape of the crystallization front and detector characteristics of crystals has been established. As the interface "melt-crystal" acquires a flatter form the structure quality of the crystal material becomes essentially better and density of pores and inclusions, dislocations as well as the value of thermoelastic stresses drop. Axial and radial distribution of Zn becomes uniform. The crystal acquires spectrometric properties. A batch of detectors on the basis of CZT crystals has been manufactured. Au films was applied to contacting surfaces by means of chemical precipitation, so contacts have ohmic properties.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close