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Information × Registration Number 0302U001583, 0100U003337 , R & D reports Title Contact phenomena in structures on the basis of A3B5 semiconductors composite connections popup.stage_title Дослідження МПЕ в діодах з варизонною активною областю Head Arkusha Yu.V., Registration Date 27-03-2002 Organization Kharkov National University named after V.N.Karazin popup.description2 The object of research - Gunn diodes with active region on a basis InGaAs variband. The purpose of work - develop mathematical model transfer electron effect (TEE) in variband semiconductors. Research of the basic physical processes connected with TEE in diodes with variband by active region. Method of research - mathematical modeling on the basis of the decision of the kinetic equation with the help of the displaced Maxwell - Bolthman function of distribution mathematical modeling og work. The basic results - developed mathematical model TEE in variband Gunn diodes. In all diodes the accumulation layers are distributed. The formation of the accumulation layers in the diode at increase of a share InAs in InGaAs near the anode occurs faster, length of a "dead zone" decreases. Product Description popup.authors popup.nrat_date 2020-04-02 Close