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Information × Registration Number 0302U005235, 0100U001551 , R & D reports Title Investigation of inverted distributions of charge carriers in strained materials in terahertz spectrum range popup.stage_title Вивчення спонтанного і стимульованого випромінювання напруженими і ненапруженими напівпровідниковими структурами при Т=4.2 і Т=77К Head Tulupenko V.M., Registration Date 22-04-2002 Organization Donbass State Engineering Academy popup.description2 Semiconductor materials: p-Ge, nanostructures on the base of GaAs are the object of investigations. The purpose is to investigate physical principles of the creation of inverse population of carriers. Spontaneous emission from non-strained and uniaxial stressed p-Ge in electric field is studied. Characteristics of impurity states for the short-range potential in quantum well are calculated. Device for the study of optical phenomena in nanostructures is assembled Product Description popup.authors popup.nrat_date 2020-04-02 Close