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Information × Registration Number 0303U003072, 0101U002880 , R & D reports Title Fundamentals of formation processes of surface nanosize structures and investigation methods for advanced materials which are essential for power generation complex popup.stage_title Експериментальні та розрахункові дослідження взаємодії систем Si - адсорбат з молекулярним киснем. Дослідження переносу самоорганізованих візерунків 0 - вимірних та 1-вимірних об'єктів на поверхні кремнію. Head Nakhodkin Mykola Grygorovich, Registration Date 28-01-2003 Organization Taras Shevchenko Kiev university popup.description2 It was shown, that at oxygen exposures ? 106L, unlike small exposures, in the Sb/Si(001)+О2 system Auger lines of oxidized silicon are presented, that testifies of presence of Si-O-Si structures. Also, formation of antimony oxides at heavy oxygen expositions is possible. Quantum chemical modeling showed, that existence of activation and activationless ways for the dissociation of oxygen molecule on Si(001)-M(1ML) surfaces with "defects trench"-type or on the surfaces with double atoms vacancies of V-group metals is possible. The activation energies for dissociation of О2 molecule are calculated: Еdis=0.88 eV, 0.9 eV, 0.7 eV that 0.5 eV for Si(001)2x1, Si(001)/As, Si(001)/Sb and Si(001)/Bi surfaces, accordingly: the energy barrier decreases with increasing of atomic number of V group metals. The supplementary charge attached on Si(001)2x1 reduces the barrier height in comparison with clean surface. It was found by STM method, that moving of two neighboring B-dimers of Bi in one direction within the onerow of Si(100)2х1 surface is co-ordinate, and is not the sequence of statistically independent jumps of each dimer in one direction. Such moving is determined by existence of weak interaction between dimers, probably over substrate. The confirmation of such interaction between neighboring dimers is asymmetrisation of their STM images in empty states in comparison with single B-dimers of Bi Product Description popup.authors popup.nrat_date 2020-04-02 Close