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Information × Registration Number 0304U001456, 0102U000331 , R & D reports Title Influence of the inhomogenous-strained semiconductor surface on properties of contact of surface-barrier Shottky structures popup.stage_title Дослідження концентраційної залежності висоти бар'єру на контакті метал-напівпровідник (Cu-p-CdTe) Head Peleschak R.М., Registration Date 25-02-2004 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The model of description of redistribution of point defects in the electric field induced by contact potential difference metal (Cu) - semiconductor (CdTe) accounting for deformation effects is proposed. It has been established that deformational effects enhance the process of electro diffusive purification of pre-contact region of semiconductor from charged defects of ionized interstice type of Cdi. Product Description popup.authors popup.nrat_date 2020-04-02 Close